POSS and PAG Dual-Containing Chemically Amplified Photoresists by RAFT Polymerization for Enhanced Thermal Performance and Acid Diffusion Inhibition

Haimeng Yu; Shaoshuai Liu; Haiyan Fu; Zepeng Cui; Liangshun Zhang; Jia Tian

doi:10.3390/app14177722

Applied Sciences (Sep 2024)

POSS and PAG Dual-Containing Chemically Amplified Photoresists by RAFT Polymerization for Enhanced Thermal Performance and Acid Diffusion Inhibition

Haimeng Yu,
Shaoshuai Liu,
Haiyan Fu,
Zepeng Cui,
Liangshun Zhang,
Jia Tian

Affiliations

Haimeng Yu: Shanghai Key Laboratory of Advanced Polymeric Materials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
Shaoshuai Liu: Shanghai Key Laboratory of Advanced Polymeric Materials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
Haiyan Fu: Shanghai Key Laboratory of Advanced Polymeric Materials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
Zepeng Cui: Shanghai Key Laboratory of Advanced Polymeric Materials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
Liangshun Zhang: Shanghai Key Laboratory of Advanced Polymeric Materials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
Jia Tian: Shanghai Key Laboratory of Advanced Polymeric Materials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China

DOI: https://doi.org/10.3390/app14177722
Journal volume & issue: Vol. 14, no. 17
p. 7722

Abstract

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A random copolymer (PTBM), utilized as deep ultra-violet (DUV) photoresist, was prepared by reversible addition-fragmentation chain transfer (RAFT) polymerization with tert-butyl methacrylate (tBMA), methyl methacrylate (MMA), triphenylsulfonium p-styrenesulfonate (TPS-SS), and functional poly (sesquicarbonylsiloxanes) (POSS-MA) as the monomer components, and 4-cyano-4-[(dodecylsulfanylthiocarbonyl) sulfanyl]pentanoic acid (CDSPA) as the RAFT reagent. Fourier transform infrared spectroscopy (FT-IR) and proton nuclear magnetic resonance (1H NMR) proved successful synthesis. Ultraviolet absorption spectroscopy (UV) analysis verified the transparency of the polymer in the DUV band. RAFT polymerization kinetics showed that the polymerization rate conformed to the first-order kinetic relationship, and the polymerization process exhibited a typical controlled free radical polymerization behavior. Thermogravimetric analysis (TGA), differential scanning calorimetry (DSC) and static thermo-mechanical analysis (TMA) showed that the incorporation of POSS groups improved the thermal properties of the copolymer. According to scanning electron microscopy (SEM) images, the copolymerization of photoacid monomers (TPS-SS) resulted in photoresist copolymers exhibiting good resistance to acid diffusion and low roughness.

Published in Applied Sciences

ISSN: 2076-3417 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Engineering (General). Civil engineering (General); Science: Biology (General); Science: Physics; Science: Chemistry
Website: http://www.mdpi.com/journal/applsci

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