Influence of laser radiation on optical properties of semiconductor materials

Abstract

In this paper, the transmission and reflection spectra of n-Si(100) single crystals are measured; n-GaAs(100); solid solutions of Ge1-хSiх (х=0.85) in the range (0.2 – 1.7)·10-6 m before and after laser irradiation at the wavelength λ = 532 nm. It is established that the main mechanism of influence of pulsed laser irradiation on the optical properties of thin surface layers of the investigated crystals is structural gettering, that is, the absorption due to the presence of sections of semiconductors that have a defective structure and have the ability to actively absorb defects and points.

Keywords

• пропускання
• відбивання
• поглинання
• лазерне опромінення
• n-si(100)
• n-gaas (100)
• ge1-xsix