Advanced Electronic Materials (Apr 2023)

Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors

  • Amine Slassi,
  • Linda‐Sheila Medondjio,
  • Andrea Padovani,
  • Francesco Tavanti,
  • Xu He,
  • Sergiu Clima,
  • Daniele Garbin,
  • Ben Kaczer,
  • Luca Larcher,
  • Pablo Ordejón,
  • Arrigo Calzolari

DOI
https://doi.org/10.1002/aelm.202201224
Journal volume & issue
Vol. 9, no. 4
pp. n/a – n/a

Abstract

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Abstract The choice of the ideal material employed in selector devices is a tough task both from the theoretical and experimental side, especially due to the lack of a synergistic approach between techniques able to correlate specific material properties with device characteristics. Using a material‐to‐device multiscale technique, a reliable protocol for an efficient characterization of the active traps in amorphous GeSe chalcogenide is proposed. The resulting trap maps trace back the specific features of materials responsible for the measured findings, and connect them to an atomistic description of the sample. The metrological approach can be straightforwardly extended to other materials and devices, which is very beneficial for an efficient material‐device codesign and the optimization of novel technologies.

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