Results in Physics (Oct 2021)

Model simulation of ferromagnetic magnetization in n-type ZnO

  • Shih-Jye Sun,
  • Guan-Long Chen,
  • Chang-Feng Yu,
  • Hsiung Chou

Journal volume & issue
Vol. 29
p. 104783

Abstract

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We proposed a theoretical model to simulate the ferromagnetism in n-type ZnO. The model suggests that ferromagnetism arises from the spin split of the electrons in the dopant-induced impurity states by Coulomb excitation. The ferromagnetism is closely dependent on the carrier density and the energy of the dopant-impurity states relative to the conduction band edge. The theory simulates the temperature-dependent magnetization increasing with the temperature and is consistent with the experimental results. The theoretical results imply that the origin of ferromagnetism includes coexisting bound magnetic polaron and carrier medium mechanisms.

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