Regulating properties of Cu2ZnSn(S, Se)4 absorber layer via the extra tiny Mg2+

Mingyang Cao; Junting Ren; Yanchun Yang; Guonan Cui; Xin Zhao; Yanqing Liu; Yajin Mi; Xiao Tian; Chengjun Zhu

doi:10.1049/mna2.12166

Micro & Nano Letters (May 2023)

Regulating properties of Cu2ZnSn(S, Se)4 absorber layer via the extra tiny Mg2+

Mingyang Cao,
Junting Ren,
Yanchun Yang,
Guonan Cui,
Xin Zhao,
Yanqing Liu,
Yajin Mi,
Xiao Tian,
Chengjun Zhu

Affiliations

Mingyang Cao: School of Physics and Electronic Information Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials Inner Mongolia Normal University Huhhot Inner Mongolia China
Junting Ren: School of Physics and Electronic Information Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials Inner Mongolia Normal University Huhhot Inner Mongolia China
Yanchun Yang: School of Physics and Electronic Information Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials Inner Mongolia Normal University Huhhot Inner Mongolia China
Guonan Cui: School of Physics and Electronic Information Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials Inner Mongolia Normal University Huhhot Inner Mongolia China
Xin Zhao: School of Physics and Electronic Information Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials Inner Mongolia Normal University Huhhot Inner Mongolia China
Yanqing Liu: School of Physics and Electronic Information Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials Inner Mongolia Normal University Huhhot Inner Mongolia China
Yajin Mi: School of Physics and Electronic Information Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials Inner Mongolia Normal University Huhhot Inner Mongolia China
Xiao Tian: School of Physics and Electronic Information Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials Inner Mongolia Normal University Huhhot Inner Mongolia China
Chengjun Zhu: School of Physical Science and Technology Inner Mongolia University Huhhot Inner Mongolia China

DOI: https://doi.org/10.1049/mna2.12166
Journal volume & issue: Vol. 18, no. 5
pp. n/a – n/a

Abstract

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Abstract Extra cation incorporations have been proved to enhance the properties of Cu2ZnSn(S, Se)4 materials, and help to obtain high‐efficiency solar cells. In this work, the authors study the influence of the extra tiny Mg2+ doping on the properties of Cu2ZnSn(S, Se)4 films. Through tuning the amount of Mg into the precursor solution, the crystallization, morphology, light absorption, and electrical properties all have been improved and can reach the optimum at 3% Mg‐doping, which is in favour of high‐performance CZTSSe devices. The authors’ finding also demonstrates Mg element can be regarded as the new candidate for extra cation incorporations.

Published in Micro & Nano Letters

ISSN: 1750-0443 (Online)
Publisher: Wiley
Country of publisher: United Kingdom
LCC subjects: Technology: Chemical technology; Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://ietresearch.onlinelibrary.wiley.com/journal/17500443

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