A modification of usual C–V measurement to more precisely characterize the band offsets in a-Si:H/c-Si heterojunctions

G.Z. Nie; C.L. Zhong; L.E. Luo; Y. Xu

doi:10.1016/j.rinp.2015.10.002

Results in Physics (Jan 2015)

A modification of usual C–V measurement to more precisely characterize the band offsets in a-Si:H/c-Si heterojunctions

G.Z. Nie,
C.L. Zhong,
L.E. Luo,
Y. Xu

Affiliations

G.Z. Nie: School of Physics and Electronic Science, Hunan University of Science and Technology, Xiangtan 411201, China
C.L. Zhong: Dept. Electronics Science and Information Engineering, Hunan University of Technology, Zhuzhou 412007, China
L.E. Luo: Dept. Electronics Science and Information Engineering, Hunan University of Technology, Zhuzhou 412007, China
Y. Xu: School of Physics and Electronic Science, Hunan University of Science and Technology, Xiangtan 411201, China

DOI: https://doi.org/10.1016/j.rinp.2015.10.002
Journal volume & issue: Vol. 5, no. C
pp. 286 – 289

Abstract

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Due to a strong inversion layer at the a-Si:H/c-Si interface, there are errors in the determination of the band offsets by usual capacitance–voltage (C–V) measurements. An improved C–V measurement was presented to correct the errors by a modification to the apparent diffusion potential Vint. In this paper, the improved C–V measurement is used to characterize the band offsets in a-Si:H/c-Si heterojunctions with a good precision. The modified apparent diffusion potential is determined from Vint and the minority carrier density at the c-Si interface deduced from the coplanar conductance measurements. The value of ΔEC = 0.17 ± 0.04 eV between a-Si:H and c-Si is found by the improved C–V measurement with a precise determination of the band offsets.

Published in Results in Physics

ISSN: 2211-3797 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Science: Physics
Website: http://www.journals.elsevier.com/results-in-physics/

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