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Open Physics
(Apr 2011)
Epitaxial graphene perfection vs. SiC substrate quality
Teklinska Dominika,
Kosciewicz Kinga,
Grodecki Kacper,
Tokarczyk Mateusz,
Kowalski Grzegorz,
Strupinski Wlodzimierz,
Olszyna Andrzej,
Baranowski Jacek
Affiliations
Teklinska Dominika
Kosciewicz Kinga
Grodecki Kacper
Tokarczyk Mateusz
Institute of Experimental Physics, Faculty of Physics, University of Warsaw, 69 Hoza Street, 00-681, Warsaw, Poland
Kowalski Grzegorz
Institute of Experimental Physics, Faculty of Physics, University of Warsaw, 69 Hoza Street, 00-681, Warsaw, Poland
Strupinski Wlodzimierz
Institute of Electronic Materials Technology, 133 Wolczynska Street, 01-919, Warsaw, Poland
Olszyna Andrzej
Faculty of Materials Science, Warsaw University of Technology, 141 Woloska Street, 02-507, Warsaw, Poland
Baranowski Jacek
DOI
https://doi.org/10.2478/s11534-010-0136-3
Journal volume & issue
Vol. 9, no. 2
pp. 446 – 453
Abstract
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No abstracts available.
Keywords
silicon carbide
sic
graphene
c/si ratio
cvd
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