National Science Open (Apr 2023)
Halide vapor phase epitaxy of monolayer molybdenum diselenide single crystals
Abstract
Single-crystalline transition metal dichalcogenides (TMD) films are of potential application in future electronics and optoelectronics. In this work, a halide vapor phase epitaxy (HVPE) strategy was proposed and demonstrated for the epitaxy of molybdenum diselenide (MoSe2) single crystals, in which metal halide vapors were in-situ produced by the chlorination of molybdenum as sources for the TMD growth. Combined with the epitaxial sapphire substrate, unidirectional domain alignment was successfully achieved and monolayer single-crystal MoSe2 films have been demonstrated on a 2-inch wafer for the first time. A series of characterizations ranging from centimeter to nanometer scales have been implemented to demonstrate the high quality and uniformity of the MoSe2. This work provides a universal strategy for the growth of TMD single-crystal films.
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