National Science Open (Apr 2023)

Halide vapor phase epitaxy of monolayer molybdenum diselenide single crystals

  • Li Taotao,
  • Yang Yang,
  • Zhou Liqi,
  • Sun Wenjie,
  • Lin Weiyi,
  • Liu Lei,
  • Zou Xilu,
  • Gao Si,
  • Nie Yuefeng,
  • Shi Yi,
  • Wang Xinran

DOI
https://doi.org/10.1360/nso/20220055
Journal volume & issue
Vol. 2

Abstract

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Single-crystalline transition metal dichalcogenides (TMD) films are of potential application in future electronics and optoelectronics. In this work, a halide vapor phase epitaxy (HVPE) strategy was proposed and demonstrated for the epitaxy of molybdenum diselenide (MoSe2) single crystals, in which metal halide vapors were in-situ produced by the chlorination of molybdenum as sources for the TMD growth. Combined with the epitaxial sapphire substrate, unidirectional domain alignment was successfully achieved and monolayer single-crystal MoSe2 films have been demonstrated on a 2-inch wafer for the first time. A series of characterizations ranging from centimeter to nanometer scales have been implemented to demonstrate the high quality and uniformity of the MoSe2. This work provides a universal strategy for the growth of TMD single-crystal films.

Keywords