Combinatorial Synthesis of AlTiN Thin Films

Abstract

Nitrides of aluminum (Al) and titanium (Ti) mixtures have long been studied and used as commercial coatings because of their high hardness and high oxidation resistance due to the formation of an alumina layer on the coating surface. To fully understand the contribution of Al and Ti to the properties of the film, a combinatorial deposition approach was employed using half-disk targets. Film growth was carried out using a magnetron sputtering system powered by a 13.56 MHz radio frequency power supply with varying argon (Ar) and nitrogen (N2) gas ratios. Depending on the location of the substrate relative to the target, atomic percent gradients of 0.60–0.70 Al and 0.30–0.40 Ti across the substrate surface were obtained from energy dispersive X-ray spectral analysis. X-ray diffraction peaks at 43.59°, 74.71° (face-centered cubic), and 50.60° (wurtzite) confirmed the presence of aluminum titanium nitride (AlTiN) mixtures, with an increasing amount of wurtzite phase at higher Al concentrations. For all samples, cauliflower-like nanograins were obtained and samples of the 80:20 Ar:N2 gas pressure ratio showed the smallest grain size among the three gas ratio combinations. The 80:20 Ar:N2 films revealed a relatively high hardness compared to the other gas ratios. All thin films exhibited good adhesion to 304 stainless steel substrates.

Keywords

• thin films
• AlTiN
• combinatorial sputtering