A Large-Signal Model for Two-Dimensional Hole Gas Diamond MOSFET Based on the QPZD

Yu Fu; Ruimin Xu; Jianjun Zhou; Xinxin Yu; Zhang Wen; Yuechan Kong; Tangsheng Chen; Yong Zhang; Bo Yan; Jijun He; Yuehang Xu

doi:10.1109/ACCESS.2019.2918187

IEEE Access (Jan 2019)

A Large-Signal Model for Two-Dimensional Hole Gas Diamond MOSFET Based on the QPZD

Yu Fu,
Ruimin Xu,
Jianjun Zhou,
Xinxin Yu,
Zhang Wen,
Yuechan Kong,
Tangsheng Chen,
Yong Zhang,
Bo Yan,
Jijun He,
Yuehang Xu

Affiliations

Yu Fu: Department of Microwave Engineering, University of Electronic Science and Technology of China, Chengdu, China
Ruimin Xu: Department of Microwave Engineering, University of Electronic Science and Technology of China, Chengdu, China
Jianjun Zhou: Nanjing Electronic Devices Institute, Nanjing, China
Xinxin Yu: Nanjing Electronic Devices Institute, Nanjing, China
Zhang Wen: Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, China
Yuechan Kong: Nanjing Electronic Devices Institute, Nanjing, China
Tangsheng Chen: Nanjing Electronic Devices Institute, Nanjing, China
Yong Zhang: Department of Microwave Engineering, University of Electronic Science and Technology of China, Chengdu, China
Bo Yan: Department of Microwave Engineering, University of Electronic Science and Technology of China, Chengdu, China
Jijun He: Chongqing Chang’an Industry Group Co., Ltd., Chongqing, China
Yuehang Xu: ORCiD; Department of Microwave Engineering, University of Electronic Science and Technology of China, Chengdu, China

DOI: https://doi.org/10.1109/ACCESS.2019.2918187
Journal volume & issue: Vol. 7
pp. 76868 – 76877

Abstract

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A compact large-signal model for hydrogen-terminated (C-H) diamond metal-oxide field effect transistors (MOSFETs) is presented based on an improved quasi-physical zone division (QPZD) model. Unlike the conventional QPZD model for the AlGaN/GaN high-electron-mobility transistors (HEMTs), the linear-mode current-voltage (I-V) model of the diamond FET is analytically deduced with an improved velocity-electric field relation and temperature-dependent effective hole mobility μeff(T ). The I-V model can directly demonstrate the relation between the negative Vds and the negative Ids of the p-type diamond FETs, which cannot be achieved by the conventional QPZD model. Finally, the proposed model has been verified by the on-wafer measurements of an in-house 2 x 500 μm diamond FET. The good consistency shows that the presented compact large-signal model can accurately predict the DC I-V, multibias scattering-parameters (S-parameters), and large-signal performances. The results of this paper will be useful for the microwave diamond-based transistor and circuit designs.

Published in IEEE Access

ISSN: 2169-3536 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6287639

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