Nature Communications (Sep 2017)
Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons
- Juan Pablo Llinas,
- Andrew Fairbrother,
- Gabriela Borin Barin,
- Wu Shi,
- Kyunghoon Lee,
- Shuang Wu,
- Byung Yong Choi,
- Rohit Braganza,
- Jordan Lear,
- Nicholas Kau,
- Wonwoo Choi,
- Chen Chen,
- Zahra Pedramrazi,
- Tim Dumslaff,
- Akimitsu Narita,
- Xinliang Feng,
- Klaus Müllen,
- Felix Fischer,
- Alex Zettl,
- Pascal Ruffieux,
- Eli Yablonovitch,
- Michael Crommie,
- Roman Fasel,
- Jeffrey Bokor
Affiliations
- Juan Pablo Llinas
- Department of Electrical Engineering and Computer Sciences, University of California
- Andrew Fairbrother
- Empa, Swiss Federal Laboratories for Materials Science and Technology
- Gabriela Borin Barin
- Empa, Swiss Federal Laboratories for Materials Science and Technology
- Wu Shi
- Materials Sciences Division, Lawrence Berkeley National Laboratory
- Kyunghoon Lee
- Department of Electrical Engineering and Computer Sciences, University of California
- Shuang Wu
- Department of Electrical Engineering and Computer Sciences, University of California
- Byung Yong Choi
- Department of Electrical Engineering and Computer Sciences, University of California
- Rohit Braganza
- Department of Electrical Engineering and Computer Sciences, University of California
- Jordan Lear
- Department of Electrical Engineering and Computer Sciences, University of California
- Nicholas Kau
- Department of Physics, UC Berkeley
- Wonwoo Choi
- Department of Physics, UC Berkeley
- Chen Chen
- Department of Physics, UC Berkeley
- Zahra Pedramrazi
- Department of Physics, UC Berkeley
- Tim Dumslaff
- Max Planck Institute for Polymer Research
- Akimitsu Narita
- Max Planck Institute for Polymer Research
- Xinliang Feng
- Center for Advancing Electronics Dresden, Department of Chemistry and Food Chemistry, TU Dresden
- Klaus Müllen
- Max Planck Institute for Polymer Research
- Felix Fischer
- Materials Sciences Division, Lawrence Berkeley National Laboratory
- Alex Zettl
- Materials Sciences Division, Lawrence Berkeley National Laboratory
- Pascal Ruffieux
- Empa, Swiss Federal Laboratories for Materials Science and Technology
- Eli Yablonovitch
- Department of Electrical Engineering and Computer Sciences, University of California
- Michael Crommie
- Materials Sciences Division, Lawrence Berkeley National Laboratory
- Roman Fasel
- Empa, Swiss Federal Laboratories for Materials Science and Technology
- Jeffrey Bokor
- Department of Electrical Engineering and Computer Sciences, University of California
- DOI
- https://doi.org/10.1038/s41467-017-00734-x
- Journal volume & issue
-
Vol. 8,
no. 1
pp. 1 – 6
Abstract
Graphene nanoribbons show promise for high-performance field-effect transistors, however they often suffer from short lengths and wide band gaps. Here, the authors use a bottom-up synthesis approach to fabricate 9- and 13-atom wide ribbons, enabling short-channel transistors with 105 on-off current ratio.
