AIP Advances (Jun 2020)

Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation

  • Xi Zhang,
  • Hideki Takeuchi,
  • Daniel Connelly,
  • Marek Hytha,
  • Robert J. Mears,
  • Leonard M. Rubin,
  • Tsu-Jae King Liu

DOI
https://doi.org/10.1063/1.5144507
Journal volume & issue
Vol. 10, no. 6
pp. 065310 – 065310-8

Abstract

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The effects of oxygen-insertion technology and low-energy fluorine (F) implantation on the Schottky barrier height (ΦBp) of a Pt/Ti/p-type Si metal–semiconductor contact are studied via electrical characterizations of Schottky diodes, physical analyses by secondary ion mass spectrometry , and chemical analyses by x-ray photoelectron spectroscopy. It is found that both oxygen-inserted (OI) layers and F can reduce ΦBp due to Ti 2p and Si 2p binding energy shifts before forming gas anneal (FGA) and due to retarded Pt diffusion into Si (facilitating low-ΦBp Pt mono-silicide formation) during FGA. The experimental findings also suggest that OI layers are more effective than F for reducing ΦBp.