Nanoscale Research Letters (Jan 2009)

Considerable Enhancement of Field Emission of SnO<sub>2</sub>Nanowires by Post-Annealing Process in Oxygen at High Temperature

  • Fang XS,
  • Tang CC,
  • Bando Y,
  • Wang JB,
  • Li K,
  • Zhong XL,
  • Zhou YC

Journal volume & issue
Vol. 4, no. 10
pp. 1135 – 1140

Abstract

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Abstract The field emission properties of SnO2nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO2nanowires, the turn-on and threshold field were 4.03 and 5.4 V/μm, respectively. Considerable enhancement of field emission of SnO2nanowires was obtained by a post-annealing process in oxygen at high temperature. When the SnO2nanowires were post-annealed at 1,000 °C in oxygen, the turn-on and threshold field were decreased to 3.77 and 4.4 V/μm, respectively, and the current density was increased to 6.58 from 0.3 mA/cm2at the same applied electric field of 5.0 V/μm.

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