Effect of Electron Irradiation Fluence on InP-Based High Electron Mobility Transistors

Abstract

In this paper, the effect of electron irradiation fluence on direct current (DC) and radio frequency (RF) of InP-based high electron mobility transistors (HEMTs) was investigated comprehensively. The devices were exposed to a 1 MeV electron beam with varied irradiation fluences from 1 × 1014 cm−2, 1 × 1015 cm−2, to 1 × 1016 cm−2. Both the channel current and transconductance dramatically decreased as the irradiation fluence rose up to 1 × 1016 cm−2, whereas the specific channel on-resistance (Ron) exhibited an apparent increasing trend. These changes could be responsible for the reduction of mobility in the channel by the irradiation-induced trap charges. However, the kink effect became weaker with the increase of the electron fluence. Additionally, the current gain cut-off frequency (fT) and maximum oscillation frequency (fmax) demonstrated a slightly downward trend as the irradiation fluence rose up to 1 × 1016 cm−2. The degradation of frequency properties was mainly due to the increase of gate-drain capacitance (CGD) and the ratio of gate-drain capacitance and gate-source capacitance (CGD/CGS). Moreover, the increase of Ron may be another important factor for fmax reduction.

Keywords

• InP-based high electron mobility transistor
• electron irradiation
• DC and RF characteristics
• kink effect