Breakthroughs in Photonics 2013: A Microwatt-Threshold Raman Silicon Laser

Yasushi Takahashi; Susumu Noda

doi:10.1109/JPHOT.2014.2310218

IEEE Photonics Journal (Jan 2014)

Breakthroughs in Photonics 2013: A Microwatt-Threshold Raman Silicon Laser

Yasushi Takahashi,
Susumu Noda

Affiliations

Yasushi Takahashi: <formula formulatype="inline"><tex Notation="TeX">$^{1}$</tex></formula> Nanoscience and Nanotechnology Research Center, Research Organization for the 21st Century, Osaka Prefecture University, Osaka, Japan
Susumu Noda: <formula formulatype="inline"><tex Notation="TeX">$^{2}$</tex></formula> Department of Electronic Science and Engineering, Kyoto University, Kyoto, Japan

DOI: https://doi.org/10.1109/JPHOT.2014.2310218
Journal volume & issue: Vol. 6, no. 2
pp. 1 – 5

Abstract

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A continuous-wave Raman silicon laser using a photonic-crystal high- Q nanocavity was developed in 2013, with a cavity size of less than 10 μm and an unprecedented ultralow threshold of 1 μW. This report describes how this breakthrough was accomplished by adopting a unique nanocavity design.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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