Planar Hall effect and large anisotropic magnetoresistance in a topological superconductor candidate Cu0.05PdTe2

Guolin Feng; Hui Huang; Zhiqiang Wu; Yuyan Han; Changjin Zhang

doi:10.1063/5.0082533

AIP Advances (Mar 2022)

Planar Hall effect and large anisotropic magnetoresistance in a topological superconductor candidate Cu0.05PdTe2

Guolin Feng,
Hui Huang,
Zhiqiang Wu,
Yuyan Han,
Changjin Zhang

Affiliations

Guolin Feng: School of Physics and Electronic Information Engineering, Ningxia Normal University, Guyuan 756000, China
Hui Huang: School of Advanced Manufacture and Engineering, Hefei University, Hefei 230601, China
Zhiqiang Wu: School of Physics and Electronic Information Engineering, Ningxia Normal University, Guyuan 756000, China
Yuyan Han: High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
Changjin Zhang: High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences, Hefei 230031, China

DOI: https://doi.org/10.1063/5.0082533
Journal volume & issue: Vol. 12, no. 3
pp. 035008 – 035008-6

Abstract

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We report the observation of a large anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) in a topological superconducting candidate Cu0.05PdTe2. The AMR and PHE data in Cu0.05PdTe2 can be well explained by the semiclassical theory, confirming that the magneto-transport behaviors of the Cu0.05PdTe2 superconductor are related to its topological nature. The AMR ratio in Cu0.05PdTe2 is one order of magnitude larger than those in traditional ferromagnetic metals. The present results suggest that Cu0.05PdTe2 is a promising material in future magnetoresistive devices with low power consumption.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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