Sensors (Sep 2024)

Highly Tunable Light Absorber Based on Topological Interface Mode Excitation of Optical Tamm State

  • Xiangjun Liu,
  • Jingxu Shi,
  • Yixuan Wang,
  • Shiyao Sun,
  • Xiangfu Wang

DOI
https://doi.org/10.3390/s24175772
Journal volume & issue
Vol. 24, no. 17
p. 5772

Abstract

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Optical absorbers based on Tamm plasmon states are known for their simple structure and high operational efficiency. However, these absorbers often have limited absorption channels, and it is challenging to continuously adjust their light absorption rates. Here, we propose a Tamm plasmon state optical absorber composed of a layered stack structure consisting of one-dimensional topological photonic crystals and graphene nano-composite materials. Using the four-by-four transfer matrix method, we investigate the structural relationship of the absorber. Our results reveal that topological interface states (TISs) effectively excite the optical Tamm state (OTS), leading to multiple absorption peaks. This expands the number of absorption channels, with the coupling number of the TIS determining the transmission quality of these channels—a value further adjustable by the period number of the photonic crystals. Tuning the filling factor, refractive index, and thickness of the graphene nano-composite material allows for a wide range of control over the device’s absorption rate, from 0 to 1. Additionally, adjusting the defect layer thickness, incident angle, and Fermi energy enables us to control the absorber’s operational bandwidth and the switching of its absorption effect. This work presents a new approach to expanding the tunability of optoelectronic devices.

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