Nature Communications (Feb 2024)

Phase-selective in-plane heteroepitaxial growth of H-phase CrSe2

  • Meizhuang Liu,
  • Jian Gou,
  • Zizhao Liu,
  • Zuxin Chen,
  • Yuliang Ye,
  • Jing Xu,
  • Xiaozhi Xu,
  • Dingyong Zhong,
  • Goki Eda,
  • Andrew T. S. Wee

DOI
https://doi.org/10.1038/s41467-024-46087-0
Journal volume & issue
Vol. 15, no. 1
pp. 1 – 8

Abstract

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Abstract Phase engineering of two-dimensional transition metal dichalcogenides (2D-TMDs) offers opportunities for exploring unique phase-specific properties and achieving new desired functionalities. Here, we report a phase-selective in-plane heteroepitaxial method to grow semiconducting H-phase CrSe2. The lattice-matched MoSe2 nanoribbons are utilized as the in-plane heteroepitaxial template to seed the growth of H-phase CrSe2 with the formation of MoSe2-CrSe2 heterostructures. Scanning tunneling microscopy and non-contact atomic force microscopy studies reveal the atomically sharp heterostructure interfaces and the characteristic defects of mirror twin boundaries emerging in the H-phase CrSe2 monolayers. The type-I straddling band alignments with band bending at the heterostructure interfaces are directly visualized with atomic precision. The mirror twin boundaries in the H-phase CrSe2 exhibit the Tomonaga-Luttinger liquid behavior in the confined one-dimensional electronic system. Our work provides a promising strategy for phase engineering of 2D TMDs, thereby promoting the property research and device applications of specific phases.