Study of the Thermoelectric Properties of Chrome Silicides

Abstract

The temperature dependences of the thermoelectromotive force of chromium mono and disilicides in the temperature range 200℃÷+600℃ have been studied. For chromium disilicide, the dependence of the thermopower coefficient (α) on temperature (T) has three sections. Chromium monosilicide is characterized by a smooth increase in thermopower with increasing temperatures up to 200℃, and then its constancy. It was revealed that silicides rich in chromium atoms have lower thermopower values than silicides rich in silicon. The maximum thermo-EMF values of 110 μV/K and 190 μV/K were observed for chromium mono- and disilicides, respectively. It was revealed that for chromium silicides the dependence of the dimensionless parameter Q = Z∙T on temperature is linear. The possibility of predicting the technology of synthesis of semiconductor material with optimal thermoelectric properties using the dependence of thermopower on conductivity and the parameter Q on temperature is shown.

Keywords

• silicide
• thermal emf
• hall mobility
• doping
• saturation
• electrical conductivity
• phase diagram
• temperature gradient