Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells

Lifang Xu; Dinesh Patel; Carmen S. Menoni; Jon M. Pikal; Jeng-Ya Yeh; J. Y. T. Huang; Luke J. Mawst; Nelson Tansu

doi:10.1109/JPHOT.2012.2233465

IEEE Photonics Journal (Jan 2012)

Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells

Lifang Xu,
Dinesh Patel,
Carmen S. Menoni,
Jon M. Pikal,
Jeng-Ya Yeh,
J. Y. T. Huang,
Luke J. Mawst,
Nelson Tansu

Affiliations

Lifang Xu: <formula formulatype="inline"><tex Notation="TeX">$^{1}$</tex></formula>Department of Electrical and Computer Engineering, Colorado State University, Fort Collins, CO, USA
Dinesh Patel: <formula formulatype="inline"><tex Notation="TeX">$^{1}$</tex></formula>Department of Electrical and Computer Engineering, Colorado State University, Fort Collins, CO, USA
Carmen S. Menoni: <formula formulatype="inline"><tex Notation="TeX">$^{1}$</tex></formula>Department of Electrical and Computer Engineering, Colorado State University, Fort Collins, CO, USA
Jon M. Pikal: <formula formulatype="inline"><tex Notation="TeX">$^{2}$</tex></formula>Department of Electrical and Computer Engineering, University of Wyoming, Laramie, WY, USA
Jeng-Ya Yeh: <formula formulatype="inline"><tex Notation="TeX">$^{3}$</tex></formula>Reed Center for Photonics, Department of Electrical & Computer Engineering, University of Wisconsin-Madison, Madison, WI, USA
J. Y. T. Huang: <formula formulatype="inline"><tex Notation="TeX">$^{3}$</tex></formula>Reed Center for Photonics, Department of Electrical & Computer Engineering, University of Wisconsin-Madison, Madison, WI, USA
Luke J. Mawst: <formula formulatype="inline"><tex Notation="TeX">$^{3}$</tex></formula>Reed Center for Photonics, Department of Electrical & Computer Engineering, University of Wisconsin-Madison, Madison, WI, USA
Nelson Tansu: <formula formulatype="inline"><tex Notation="TeX">$^{4}$</tex></formula>Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA, USA

DOI: https://doi.org/10.1109/JPHOT.2012.2233465
Journal volume & issue: Vol. 4, no. 6
pp. 2382 – 2389

Abstract

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The time evolution of the photoluminescence (PL) of 1300-nm emitting InGaAsN/ GaAs/GaAsP strain-compensated single quantum well (QW) in the temperature range of T 1/4 10 K - 300 K is investigated. The PL spectra observed at the early stages of carrier recombination is dominated by two transitions. These two transitions are identified as the first quantized electron state to heavy-hole state (e1-hh1) and electron to light-hole state (e1-lh1) from the analysis of polarized photocurrent measurements in combination with k · p simulation of the band structure. At longer time delays, the dilute-nitride QW exhibits carrier localization at low temperatures and faster recombination time at higher temperatures. The PL dynamics characteristics observed in the InGaAsN QW are different from those measured from the InGaAs QW.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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