Synthesis and electronic properties of Fe2TiO5 epitaxial thin films

Motoki Osada; Kazunori Nishio; Harold Y. Hwang; Yasuyuki Hikita

doi:10.1063/1.5025569

APL Materials (May 2018)

Synthesis and electronic properties of Fe2TiO5 epitaxial thin films

Motoki Osada,
Kazunori Nishio,
Harold Y. Hwang,
Yasuyuki Hikita

Affiliations

Motoki Osada: Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
Kazunori Nishio: Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford, California 94305, USA
Harold Y. Hwang: Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford, California 94305, USA
Yasuyuki Hikita: SLAC National Accelerator Laboratory, Stanford Institute for Materials and Energy Sciences, Menlo Park, California 94025, USA

DOI: https://doi.org/10.1063/1.5025569
Journal volume & issue: Vol. 6, no. 5
pp. 056101 – 056101-6

Abstract

Read online

We investigate the growth phase diagram of pseudobrookite Fe2TiO5 epitaxial thin films on LaAlO3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20–80 Ω cm, which are significantly lower than α-Fe2O3, making Fe2TiO5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe2TiO5 in oxide heterostructures for photocatalytic and photoelectrochemical applications.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

About the journal