Nanoscale Research Letters (Jan 2011)

Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics

  • Park Byoungjun,
  • Cho Kyoungah,
  • Kim Sungsu,
  • Kim Sangsig

Journal volume & issue
Vol. 6, no. 1
p. 41

Abstract

Read online

Abstract Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm2/V·s and their on/off ratio was in the range of 104–105. The threshold voltages of the programmed and erased states were negligibly changed up to 103 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.

Keywords