Preparation, Structure, and Electrical Properties of Cobalt-Modified Bi(Sc_3/4In_1/4)O₃–PbTiO₃–Pb(Mg_1/3Nb_2/3)O₃ High-Temperature Piezoelectric Ceramics

Abstract

Cobalt-modified 0.40Bi(Sc3/4In1/4)O3–0.58PbTiO3–0.02Pb(Mg1/3Nb2/3)O3 ceramics (abbreviated as BSI–PT–PMN–xCo) were produced by conventional two-step solid-state processing. The phase structure, micro structure morphology, and electrical properties of BSI–PT–PMN–xCo were systematically studied. The introduction of Co ions exerted a significant influence on the structure and electrical properties. The experiment results demonstrated that Co ions entered the B-sites of the lattice, resulting in slight lattice distortion and a smaller lattice constant. The average grain size increased from ~1.94 μm to ~2.68 μm with the increasing Co content. The optimized comprehensive electrical properties were obtained with proper Co-modified content 0.2 wt.%. The Curie temperature (Tc) was 412 °C, the piezoelectric constant (d33) was 370 pC/N, the remnant polarization (Pr) was 29.2 μC/cm2, the relatively dielectric constant (εr) was 1450, the planar electromechanical coupling coefficient (kp) was 46.5, and the dielectric loss (tanδ) was 0.051. Together with the enhanced DC resistivity of 109 Ω cm under 300 °C and good thermal stability, BSI–PT–PMN–0.2Co ceramic is a promising candidate material for high-temperature piezoelectric applications.

Keywords

• BSI–PT–PMN ceramic
• Co ion doping
• high temperature piezoelectric application