Demonstration of a violet-distributed feedback laser with fairly small temperature dependence in current-light characteristics

Abstract

We have developed a GaN-based distributed feedback laser diode (DFB-LD) with the detuning of +5 nm to obtain a smaller temperature dependence of the threshold current. We found that the current-light characteristics almost overlapped up to 300 mW between 25 °C and 80 °C. The estimated characteristic temperature is about 2550 K. These indicate that our DFB-LD is promising for applications that require small temperature dependence in the output power and oscillation wavelength at constant operation current without precise temperature control.

Keywords

• distributed feedback laser
• semiconductor laser
• gallium nitride