Defect Engineering of TlPt2S3 for Highly Polarization-Sensitive Photodetector

Wenyue Wang; Fangqi Liu; Jian Shi; Zixin Yang; Tongtong Wang; Bin Liu; Qiang Yu; Sicong Zhu; Xianping Wang; Jian Wu

doi:10.1109/JPHOT.2022.3233351

IEEE Photonics Journal (Jan 2023)

Defect Engineering of TlPt2S3 for Highly Polarization-Sensitive Photodetector

Wenyue Wang,
Fangqi Liu,
Jian Shi,
Zixin Yang,
Tongtong Wang,
Bin Liu,
Qiang Yu,
Sicong Zhu,
Xianping Wang,
Jian Wu

Affiliations

Wenyue Wang: ORCiD; Jiangxi Key Laboratory of Photoelectronic and Telecommunication, College of Physics and Communication Electronics, Jiangxi Normal University, Nanchang, China
Fangqi Liu: Wuhan University of Science and Technology, College of Science, Hubei Province Key Laboratory of Systems Science in Metallurgical Process, The State Key Laboratory for Refractories and Metallurgy, Wuhan, China
Jian Shi: Jiangxi Key Laboratory of Photoelectronic and Telecommunication, College of Physics and Communication Electronics, Jiangxi Normal University, Nanchang, China
Zixin Yang: College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, China
Tongtong Wang: Wuhan University of Science and Technology, College of Science, Hubei Province Key Laboratory of Systems Science in Metallurgical Process, The State Key Laboratory for Refractories and Metallurgy, Wuhan, China
Bin Liu: Wuhan University of Science and Technology, College of Science, Hubei Province Key Laboratory of Systems Science in Metallurgical Process, The State Key Laboratory for Refractories and Metallurgy, Wuhan, China
Qiang Yu: College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, China
Sicong Zhu: Wuhan University of Science and Technology, College of Science, Hubei Province Key Laboratory of Systems Science in Metallurgical Process, The State Key Laboratory for Refractories and Metallurgy, Wuhan, China
Xianping Wang: ORCiD; Jiangxi Key Laboratory of Photoelectronic and Telecommunication, College of Physics and Communication Electronics, Jiangxi Normal University, Nanchang, China
Jian Wu: ORCiD; College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, China

DOI: https://doi.org/10.1109/JPHOT.2022.3233351
Journal volume & issue: Vol. 15, no. 1
pp. 1 – 6

Abstract

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Photodetectors based on two-dimensional materials exhibit excellent performance including high specific detectivity and fast response times. However, the polarization detection performance remains to be improved. Here, we propose a strategy to improve the polarization sensitivity of TlPt2S3-based photodetectors by defect engineering based on density functional theory (DFT) calculations and investigate their optoelectronic properties using quantum transport simulations at 0.2 V bias. Theoretical calculations show that the monolayer TlPt2S3 achieves a multifunctional output of the optoelectronic device and obtains a larger photocurrent and high extinction ratio by defect engineering under linearly polarized light irradiation. These results indicate that TlPt2S3 is expected to be one of the candidate materials for future optoelectronics and polarized light devices.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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