Physical properties of two-dimensional black phosphorus and its application in optoelectronics

Abstract

Two-dimensional layered materials have gained significant attention in recent years as novel materials. By fabricating devices from these materials and evaluating their electrical and optoelectronic properties, we can preliminarily assess their potential applications in electronics and optoelectronics. This paper analyzes the physical properties of two-dimensional black phosphorus from both electronic and optical perspectives. Optoelectronic devices based on black phosphorus are fabricated, and their applications in basic photonics and bio-photonics are explored. A tunneling acceleration sensor is developed by integrating two-dimensional black phosphorus with a cantilever beam structure. The sensitivity, repeatability, and response time of the sensor are tested through simulation experiments. The experimental results show that the photocurrent of the 2D black phosphorus-based photodetector increases from about 103 A□W−1 to about 105 A□W−1 when the measurement temperature decreases from 250K to 25K at a power density of 10mW/cm2. The sensor was subjected to repeated loading and unloading under the application of 200g weights, and the capacitance output fluctuated back and forth between 40 and 450pF and remained essentially unchanged in the steady state, with stable capacitance performance and a fast response time of about 20S.

Keywords

• 2d black phosphorus
• tunneling sensor
• base photodetector
• power density
• response time
• 03b70