Time-resolved single dopant charge dynamics in silicon

Mohammad Rashidi; Jacob A. J. Burgess; Marco Taucer; Roshan Achal; Jason L. Pitters; Sebastian Loth; Robert A. Wolkow

doi:10.1038/ncomms13258

Nature Communications (Oct 2016)

Time-resolved single dopant charge dynamics in silicon

Mohammad Rashidi,
Jacob A. J. Burgess,
Marco Taucer,
Roshan Achal,
Jason L. Pitters,
Sebastian Loth,
Robert A. Wolkow

Affiliations

Mohammad Rashidi: Department of Physics, University of Alberta
Jacob A. J. Burgess: Max Planck Institute for the Structure and Dynamics of Matter
Marco Taucer: Department of Physics, University of Alberta
Roshan Achal: Department of Physics, University of Alberta
Jason L. Pitters: National Institute for Nanotechnology, National Research Council of Canada
Sebastian Loth: Max Planck Institute for the Structure and Dynamics of Matter
Robert A. Wolkow: Department of Physics, University of Alberta

DOI: https://doi.org/10.1038/ncomms13258
Journal volume & issue: Vol. 7, no. 1
pp. 1 – 7

Abstract

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Probing individual impurities will become increasingly important as devices shrink towards the nanoscale. Here Rashidi et al., introduce a method based on time-resolved scanning tunnelling spectroscopy of surface dangling bonds to investigate the dynamics of individual dopants in silicon.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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