Origin of resistance state relaxation and nonvolatile features in NiO films: Interfacial vs filamentary resistive switching

Wanying Xia; Xianwen Sun; Yanfeng Yin; Caihong Jia; Guoqiang Li; Weifeng Zhang

doi:10.1063/5.0007173

AIP Advances (Oct 2020)

Origin of resistance state relaxation and nonvolatile features in NiO films: Interfacial vs filamentary resistive switching

Wanying Xia,
Xianwen Sun,
Yanfeng Yin,
Caihong Jia,
Guoqiang Li,
Weifeng Zhang

Affiliations

Wanying Xia: Henan Key Laboratory of Photovoltaic Materials and School of Physics and Electronics, Henan University, Kaifeng 475004, People’s Republic of China
Xianwen Sun: Henan Key Laboratory of Photovoltaic Materials and School of Physics and Electronics, Henan University, Kaifeng 475004, People’s Republic of China
Yanfeng Yin: Henan Key Laboratory of Photovoltaic Materials and School of Physics and Electronics, Henan University, Kaifeng 475004, People’s Republic of China
Caihong Jia: Henan Key Laboratory of Photovoltaic Materials and School of Physics and Electronics, Henan University, Kaifeng 475004, People’s Republic of China
Guoqiang Li: Henan Key Laboratory of Photovoltaic Materials and School of Physics and Electronics, Henan University, Kaifeng 475004, People’s Republic of China
Weifeng Zhang: Henan Key Laboratory of Photovoltaic Materials and School of Physics and Electronics, Henan University, Kaifeng 475004, People’s Republic of China

DOI: https://doi.org/10.1063/5.0007173
Journal volume & issue: Vol. 10, no. 10
pp. 105319 – 105319-5

Abstract

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NiO films grown on Pt and Nb:SrTiO3 (NSTO) substrates display filament-type and interface-type resistance switching (RS), respectively. The resistance retention studies show that these two different RSs also lead to distinct resistance evolutions. For Pt/NiO/Pt, both high and low resistance states have good retention property, demonstrating that the conducting filament is stable once it is formed. However, for Pt/NiO/NSTO/In, all resistance states show time-relaxation, and the relaxation trend depends on the polarity of the write bias. The resistive relaxation and nonvolatile features are attributed to the charge migration and electron trapping scenario, respectively.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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