Multi-Parameter Optimization of a Shallow Ridge InP Traveling Wave Mach-Zehnder Modulator for Beyond 200 Gb&#x002F;s Optical Datacom Applications

Ruoyun Yao; Wanshu Xiong; Zhangwan Peng; Weiwei Pan; Xiaojun Ying; Yili Liu; Yiti Xiong; Chen Ji

doi:10.1109/JPHOT.2023.3282651

IEEE Photonics Journal (Jan 2023)

Multi-Parameter Optimization of a Shallow Ridge InP Traveling Wave Mach-Zehnder Modulator for Beyond 200 Gb/s Optical Datacom Applications

Ruoyun Yao,
Wanshu Xiong,
Zhangwan Peng,
Weiwei Pan,
Xiaojun Ying,
Yili Liu,
Yiti Xiong,
Chen Ji

Affiliations

Ruoyun Yao: ORCiD; College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
Wanshu Xiong: ORCiD; College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
Zhangwan Peng: ORCiD; College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
Weiwei Pan: College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
Xiaojun Ying: ORCiD; Research Institute of Intelligent Networks, Zhejiang Lab, Hangzhou, China
Yili Liu: Research Institute of Intelligent Networks, Zhejiang Lab, Hangzhou, China
Yiti Xiong: ORCiD; Research Institute of Intelligent Networks, Zhejiang Lab, Hangzhou, China
Chen Ji: College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China

DOI: https://doi.org/10.1109/JPHOT.2023.3282651
Journal volume & issue: Vol. 15, no. 3
pp. 1 – 7

Abstract

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We present multi-parameter optimization of a shallow ridge InP-based traveling wave Mach-Zehnder modulator (MZM) for ultra-wide modulation bandwidth by velocity and impedance matching and microwave attenuation minimization. Relationship between MZM microwave loss and p-cladding layer doping profile is quantitatively analyzed and incorporated in device optimization. We propose a systematic analysis methodology allowing the full optimization of an InP shallow ridge MZM capable of 200 Gb/s PAM4 operation, compatible with high-volume low-cost manufacturing. Our design is expected to achieve 4.3 V half-wave voltage and 81 GHz 3-dB bandwidth with simplified fabrication process and improved long-term reliability.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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