Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes

Vladimir Neplokh; Vladimir Fedorov; Alexey Mozharov; Fedor Kochetkov; Konstantin Shugurov; Eduard Moiseev; Nuño Amador-Mendez; Tatiana Statsenko; Sofia Morozova; Dmitry Krasnikov; Albert G. Nasibulin; Regina Islamova; George Cirlin; Maria Tchernycheva; Ivan Mukhin

doi:10.3390/nano11102549

Nanomaterials (Sep 2021)

Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes

Vladimir Neplokh,
Vladimir Fedorov,
Alexey Mozharov,
Fedor Kochetkov,
Konstantin Shugurov,
Eduard Moiseev,
Nuño Amador-Mendez,
Tatiana Statsenko,
Sofia Morozova,
Dmitry Krasnikov,
Albert G. Nasibulin,
Regina Islamova,
George Cirlin,
Maria Tchernycheva,
Ivan Mukhin

Affiliations

Vladimir Neplokh: High School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia
Vladimir Fedorov: High School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia
Alexey Mozharov: Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
Fedor Kochetkov: Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
Konstantin Shugurov: Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
Eduard Moiseev: Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
Nuño Amador-Mendez: Centre of Nanosciences and Nanotechnologies, UMR 9001 CNRS, University Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
Tatiana Statsenko: Department of Chemistry, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia
Sofia Morozova: Department of Chemistry, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia
Dmitry Krasnikov: Skolkovo Institute of Science and Technology, Bolshoy Boulevard 30/1, 121205 Moscow, Russia
Albert G. Nasibulin: Skolkovo Institute of Science and Technology, Bolshoy Boulevard 30/1, 121205 Moscow, Russia
Regina Islamova: Institute of Chemistry, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia
George Cirlin: Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
Maria Tchernycheva: Centre of Nanosciences and Nanotechnologies, UMR 9001 CNRS, University Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
Ivan Mukhin: High School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia

DOI: https://doi.org/10.3390/nano11102549
Journal volume & issue: Vol. 11, no. 10
p. 2549

Abstract

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We demonstrate flexible red light-emitting diodes based on axial GaPAs/GaP heterostructured nanowires embedded in polydimethylsiloxane membranes with transparent electrodes involving single-walled carbon nanotubes. The GaPAs/GaP axial nanowire arrays were grown by molecular beam epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films has the main electroluminescence line at 670 nm. Membrane-based light-emitting diodes (LEDs) were compared with GaPAs/GaP NW array LED devices processed directly on Si growth substrate revealing similar electroluminescence properties. Demonstrated membrane-based red LEDs are opening an avenue for flexible full color inorganic devices.

Published in Nanomaterials

ISSN: 2079-4991 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry
Website: https://www.mdpi.com/journal/nanomaterials

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