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Open Physics
(Jun 2004)
Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene
Matsuo Yasumitsu,
Ijichi Takehiko,
Yamada Hironori,
Hatori Junko,
Ikehata Seiichiro
Affiliations
Matsuo Yasumitsu
Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, 162-8601, Tokyo, Japan
Ijichi Takehiko
Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, 162-8601, Tokyo, Japan
Yamada Hironori
Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, 162-8601, Tokyo, Japan
Hatori Junko
Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, 162-8601, Tokyo, Japan
Ikehata Seiichiro
Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, 162-8601, Tokyo, Japan
DOI
https://doi.org/10.2478/BF02475636
Journal volume & issue
Vol. 2, no. 2
pp. 357 – 366
Abstract
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No abstracts available.
Keywords
molecular conductor
organic thin-film field effect transistor
ferroelectric memory effect
73.40.qv
73.61.ph
77.84.fa
72.80.le
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