Indonesian Journal of Chemistry (Jan 2022)

Silicon Carbide/Polysilazane Composite: Effect of Temperature on the Densification, Phase, and Microstructure Evolution

  • Fiqhi Fauzi,
  • Alfian Noviyanto,
  • Pipit Fitriani,
  • Amirudin Wibowo,
  • Toto Sudiro,
  • Didik Aryanto,
  • Nurul Taufiqu Rochman

DOI
https://doi.org/10.22146/ijc.69118
Journal volume & issue
Vol. 22, no. 2
pp. 548 – 556

Abstract

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This paper reports a route to suppress the grain growth in silicon carbide (SiC) during its sintering by combining it with polysilazane (PSZ). SiC was mixed with PSZ in a 1:1 weight ratio and sintered at 1600, 1700, and 1800 °C in a hot-pressing furnace. A satisfactory density was obtained at sintering temperatures > 1600 °C. The grain sizes of the SiC/PSZ composites sintered at 1700 and 1800 °C were 112 and 125 nm, respectively. The grain shape of the SiC/PSZ composite sintered at 1700 °C was circular and mainly similar to the initial shape of the SiC powder. Grain shape accommodation was observed at a sintering temperature of 1800 °C. It is suggested that different sample shapes were affected by different liquid phase formations. Silicon oxynitride (Si2N2O) was formed and played an important role in densification and microstructure generation.

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