High-Performance Silicon 2&#x00A0;&#x00D7;&#x00A0;2 Thermo-Optic Switch for the 2-<inline-formula><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula>m Wavelength Band

Li Shen; Meng Huang; Shuang Zheng; Lesi Yang; Xiangfeng Peng; Xiaoping Cao; Shuhui Li; Jian Wang

doi:10.1109/JPHOT.2019.2921923

IEEE Photonics Journal (Jan 2019)

High-Performance Silicon 2 × 2 Thermo-Optic Switch for the 2-<inline-formula><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula>m Wavelength Band

Li Shen,
Meng Huang,
Shuang Zheng,
Lesi Yang,
Xiangfeng Peng,
Xiaoping Cao,
Shuhui Li,
Jian Wang

Affiliations

Li Shen: ORCiD; Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
Meng Huang: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
Shuang Zheng: ORCiD; Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
Lesi Yang: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
Xiangfeng Peng: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
Xiaoping Cao: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
Shuhui Li: ORCiD; Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
Jian Wang: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China

DOI: https://doi.org/10.1109/JPHOT.2019.2921923
Journal volume & issue: Vol. 11, no. 4
pp. 1 – 6

Abstract

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The 2-μm spectral window is emerging as a promising candidate for the next generation communication. We present a 2 × 2 Mach-Zehnder interferometric thermo-optic switch at 2-μm waveband. The device is fabricated on a 220 nm thick silicon-on-insulator wafer with standard complementary metal oxide semiconductor (CMOS) process. We demonstrate an over 30 dB extinction ratio under the power consumption of 32.3 mW, with an average switching time of ~15 μs. This proof of principle optical switch paves a way toward full silicon-based chip-scale interconnects in the 2-μm waveband.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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