Nature Communications (May 2019)
Gate tunable giant anisotropic resistance in ultra-thin GaTe
- Hanwen Wang,
- Mao-Lin Chen,
- Mengjian Zhu,
- Yaning Wang,
- Baojuan Dong,
- Xingdan Sun,
- Xiaorong Zhang,
- Shimin Cao,
- Xiaoxi Li,
- Jianqi Huang,
- Lei Zhang,
- Weilai Liu,
- Dongming Sun,
- Yu Ye,
- Kepeng Song,
- Jianjian Wang,
- Yu Han,
- Teng Yang,
- Huaihong Guo,
- Chengbing Qin,
- Liantuan Xiao,
- Jing Zhang,
- Jianhao Chen,
- Zheng Han,
- Zhidong Zhang
Affiliations
- Hanwen Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Mao-Lin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Mengjian Zhu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology
- Yaning Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Baojuan Dong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Xingdan Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Xiaorong Zhang
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University
- Shimin Cao
- International Center for Quantum Materials, School of Physics, Peking University
- Xiaoxi Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Jianqi Huang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Lei Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Weilai Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Dongming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Yu Ye
- Collaborative Innovation Center of Quantum Matter
- Kepeng Song
- Advanced Membranes and Porous Materials Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology
- Jianjian Wang
- Multi-scale Porous Materials Center, Institute of Advanced Interdisciplinary Studies, Chongqing University
- Yu Han
- Advanced Membranes and Porous Materials Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology
- Teng Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Huaihong Guo
- College of Sciences, Liaoning Shihua University
- Chengbing Qin
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University
- Liantuan Xiao
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University
- Jing Zhang
- Collaborative Innovation Center of Extreme Optics, Shanxi University
- Jianhao Chen
- International Center for Quantum Materials, School of Physics, Peking University
- Zheng Han
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Zhidong Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- DOI
- https://doi.org/10.1038/s41467-019-10256-3
- Journal volume & issue
-
Vol. 10,
no. 1
pp. 1 – 8
Abstract
Some atomically thin crystals feature crystallographic anisotropy, but demonstrations of electrical anisotropy are scarce. Here, the authors show that the electrical conductivity of few-layered GaTe along the x and y directions can be widely gate tuned up to 103, and demonstrate anisotropic non-volatile memory behavior.
