Nature Communications (May 2016)
Tunnel electroresistance through organic ferroelectrics
- B. B. Tian,
- J. L. Wang,
- S. Fusil,
- Y. Liu,
- X. L. Zhao,
- S. Sun,
- H. Shen,
- T. Lin,
- J. L. Sun,
- C. G. Duan,
- M. Bibes,
- A. Barthélémy,
- B. Dkhil,
- V. Garcia,
- X. J. Meng,
- J. H. Chu
Affiliations
- B. B. Tian
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- J. L. Wang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- S. Fusil
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay
- Y. Liu
- Laboratoire Structures, Propriétés et Modélisation des Solides, CentraleSupélec, CNRS-UMR8580, Université Paris-Saclay
- X. L. Zhao
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- S. Sun
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- H. Shen
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- T. Lin
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- J. L. Sun
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- C. G. Duan
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University
- M. Bibes
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay
- A. Barthélémy
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay
- B. Dkhil
- Laboratoire Structures, Propriétés et Modélisation des Solides, CentraleSupélec, CNRS-UMR8580, Université Paris-Saclay
- V. Garcia
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay
- X. J. Meng
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- J. H. Chu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- DOI
- https://doi.org/10.1038/ncomms11502
- Journal volume & issue
-
Vol. 7,
no. 1
pp. 1 – 6
Abstract
Ferroelectric organic materials can be used for tunnel barriers in memory devices as a cheaper and eco-friendly replacement of their inorganic counterparts. Here, Tian et al. use poly(vinylidene fluoride) with 1–2 layer thickness to achieve giant tunnel electroresistance of 1,000% at room temperature.
