Communications Materials (Dec 2022)

Spectroscopic evidence of flat bands in breathing kagome semiconductor Nb3I8

  • Sabin Regmi,
  • Tharindu Fernando,
  • Yuzhou Zhao,
  • Anup Pradhan Sakhya,
  • Gyanendra Dhakal,
  • Iftakhar Bin Elius,
  • Hector Vazquez,
  • Jonathan D. Denlinger,
  • Jihui Yang,
  • Jiun-Haw Chu,
  • Xiaodong Xu,
  • Ting Cao,
  • Madhab Neupane

DOI
https://doi.org/10.1038/s43246-022-00318-3
Journal volume & issue
Vol. 3, no. 1
pp. 1 – 6

Abstract

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Niobium halide semiconductors are interesting for their breathing kagome geometry, easily exfoliable layered structure, and potential two-dimensional magnetism. Here, experimental evidence of flat bands in Nb3I8, originating from the niobium breathing kagome lattice, is observed using angle-resolved photoemission spectroscopy and supported by first-principles calculations.