Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

Nazek El-Atab; Samar Alqatari; Feyza B. Oruc; Tewfic Souier; Matteo Chiesa; Ali K. Okyay; Ammar Nayfeh

doi:10.1063/1.4826583

AIP Advances (Oct 2013)

Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

Nazek El-Atab,
Samar Alqatari,
Feyza B. Oruc,
Tewfic Souier,
Matteo Chiesa,
Ali K. Okyay,
Ammar Nayfeh

Affiliations

Nazek El-Atab: Institute Center for Microsystems – Imicro, Department of Electrical Engineering and Computer Science (EECS), Masdar Institute of Science and Technology Abu Dhabi, United Arab Emirates
Samar Alqatari: Institute Center for Microsystems – Imicro, Department of Electrical Engineering and Computer Science (EECS), Masdar Institute of Science and Technology Abu Dhabi, United Arab Emirates
Feyza B. Oruc: Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara, Turkey
Tewfic Souier: Institute Center for Microsystems – Imicro, Department of Electrical Engineering and Computer Science (EECS), Masdar Institute of Science and Technology Abu Dhabi, United Arab Emirates
Matteo Chiesa: Institute Center for Microsystems – Imicro, Department of Electrical Engineering and Computer Science (EECS), Masdar Institute of Science and Technology Abu Dhabi, United Arab Emirates
Ali K. Okyay: Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara, Turkey
Ammar Nayfeh: Institute Center for Microsystems – Imicro, Department of Electrical Engineering and Computer Science (EECS), Masdar Institute of Science and Technology Abu Dhabi, United Arab Emirates

DOI: https://doi.org/10.1063/1.4826583
Journal volume & issue: Vol. 3, no. 10
pp. 102119 – 102119-7

Abstract

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A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON) ∼3.5 V. The measured breakdown voltage (VBR) and electric field (EBR) for this diode are 5.4 V and 3.86 MV/cm, respectively.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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