Growth and characterization of Bi2Se3 crystals by chemical vapor transport

W. H. Jiao; S. Jiang; C. M. Feng; Z. A. Xu; G. H. Cao; M. Xu; D. L. Feng; A. Yamada; K. Matsubayashi; Y. Uwatoko

doi:10.1063/1.4727957

AIP Advances (Jun 2012)

Growth and characterization of Bi2Se3 crystals by chemical vapor transport

W. H. Jiao,
S. Jiang,
C. M. Feng,
Z. A. Xu,
G. H. Cao,
M. Xu,
D. L. Feng,
A. Yamada,
K. Matsubayashi,
Y. Uwatoko

Affiliations

W. H. Jiao: Department of Physics and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China
S. Jiang: Department of Physics and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China
C. M. Feng: Department of Physics and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China
Z. A. Xu: Department of Physics and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China
G. H. Cao: Department of Physics and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China
M. Xu: State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, P. R. China
D. L. Feng: State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, P. R. China
A. Yamada: Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
K. Matsubayashi: Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
Y. Uwatoko: Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa, Chiba 277-8581, Japan

DOI: https://doi.org/10.1063/1.4727957
Journal volume & issue: Vol. 2, no. 2
pp. 022148 – 022148-8

Abstract

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Regularly-shaped high-quality Bi2Se3 crystals were grown by a chemical vapor transport using iodine as the transport agent. In addition to exhibiting a characteristic Dirac cone for a topological insulator, the Bi2Se3 crystals show some outstanding properties including additional crystallographic surfaces, large residual resistance ratio (∼10), and high mobility (∼8000 cm2·V−1·s−1). The low-temperature resistivity abnormally increases with applying pressures up to 1.7 GPa, and no superconductivity was observed down to 0.4 K.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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