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Open Chemistry
(Nov 2014)
Properties of atmospheric pressure plasma oxidized layers on silicon wafers
Skácelová Dana,
Sládek Petr,
Sťahel Pavel,
Pawera Lukáš,
Haničinec Martin,
Meichsner Jürgen,
Černák Mirko
Affiliations
Skácelová Dana
Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlářská 2, 611 37, Brno, Czech Republic
Sládek Petr
Department of Physics, Faculty of Education, Masaryk University, Poříčí 7, 603 00, Brno, Czech Republic
Sťahel Pavel
Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlářská 2, 611 37, Brno, Czech Republic
Pawera Lukáš
Department of Physics, Faculty of Education, Masaryk University, Poříčí 7, 603 00, Brno, Czech Republic
Haničinec Martin
Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlářská 2, 611 37, Brno, Czech Republic
Meichsner Jürgen
Institute of Physics, University of Greifswald, Felix-Hausdorff-Strasse 6, 17487, Greifswald, Germany
Černák Mirko
Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlářská 2, 611 37, Brno, Czech Republic
DOI
https://doi.org/10.1515/chem-2015-0047
Journal volume & issue
Vol. 13, no. 1
Abstract
Read online
No abstracts available.
Keywords
amorphous silicon oxide
atmospheric pressure plasma
oxidation
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