Precisely Control Relationship between Sulfur Vacancy and H Absorption for Boosting Hydrogen Evolution Reaction

Jing Jin; Xinyao Wang; Yang Hu; Zhuang Zhang; Hongbo Liu; Jie Yin; Pinxian Xi

doi:10.1007/s40820-023-01291-3

Nano-Micro Letters (Jan 2024)

Precisely Control Relationship between Sulfur Vacancy and H Absorption for Boosting Hydrogen Evolution Reaction

Jing Jin,
Xinyao Wang,
Yang Hu,
Zhuang Zhang,
Hongbo Liu,
Jie Yin,
Pinxian Xi

Affiliations

Jing Jin: College of Chemistry and Chemical Engineering, Frontiers Science Center for Rare Isotopes, State Key Laboratory of Applied Organic Chemistry, Lanzhou University
Xinyao Wang: College of Chemistry and Chemical Engineering, Frontiers Science Center for Rare Isotopes, State Key Laboratory of Applied Organic Chemistry, Lanzhou University
Yang Hu: College of Chemistry and Chemical Engineering, Frontiers Science Center for Rare Isotopes, State Key Laboratory of Applied Organic Chemistry, Lanzhou University
Zhuang Zhang: College of Chemistry and Chemical Engineering, Frontiers Science Center for Rare Isotopes, State Key Laboratory of Applied Organic Chemistry, Lanzhou University
Hongbo Liu: College of Chemistry and Chemical Engineering, Frontiers Science Center for Rare Isotopes, State Key Laboratory of Applied Organic Chemistry, Lanzhou University
Jie Yin: College of Chemistry and Chemical Engineering, Frontiers Science Center for Rare Isotopes, State Key Laboratory of Applied Organic Chemistry, Lanzhou University
Pinxian Xi: College of Chemistry and Chemical Engineering, Frontiers Science Center for Rare Isotopes, State Key Laboratory of Applied Organic Chemistry, Lanzhou University

DOI: https://doi.org/10.1007/s40820-023-01291-3
Journal volume & issue: Vol. 16, no. 1
pp. 1 – 11

Abstract

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Highlights The Ar plasma etching strategy was introduced to homogeneously distributed S-vacancies (VS) into the NiS2 nanosheets (NiS2-VS). Build the relationship between sulfur vacancy and H absorption and find that NiS2-VS 5.9% performs outstanding hydrogen evolution reaction performance and remarkable stability.

Published in Nano-Micro Letters

ISSN: 2311-6706 (Print); 2150-5551 (Online)
Publisher: SpringerOpen
Country of publisher: Germany
LCC subjects: Technology
Website: http://www.springer.com/40820

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