Growth of ∼5 cm2V−1s−1 mobility, p-type Copper(I) oxide (Cu2O) films by fast atmospheric atomic layer deposition (AALD) at 225°C and below

Abstract

Phase pure, dense Cu2O thin films were grown on glass and polymer substrates at 225°C by rapid atmospheric atomic layer deposition (AALD). Carrier mobilities of 5 cm2V−1s−1 and carrier concentrations of ∼1016 cm−3 were achieved in films of thickness 50 - 120 nm, over a >10 cm2 area. Growth rates were ∼1 nm·min−1 which is two orders of magnitude faster than conventional ALD.. The high mobilities achieved using the atmospheric, low temperature method represent a significant advance for flextronics and flexible solar cells which require growth on plastic substrates.