Nature Communications (Mar 2023)
Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films
- Shu Shi,
- Haolong Xi,
- Tengfei Cao,
- Weinan Lin,
- Zhongran Liu,
- Jiangzhen Niu,
- Da Lan,
- Chenghang Zhou,
- Jing Cao,
- Hanxin Su,
- Tieyang Zhao,
- Ping Yang,
- Yao Zhu,
- Xiaobing Yan,
- Evgeny Y. Tsymbal,
- He Tian,
- Jingsheng Chen
Affiliations
- Shu Shi
- Department of Materials Science and Engineering, National University of Singapore
- Haolong Xi
- School of Materials and Energy, Electron Microscopy Centre of Lanzhou University and Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University
- Tengfei Cao
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska
- Weinan Lin
- Department of physics, Xiamen University
- Zhongran Liu
- Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University
- Jiangzhen Niu
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, Hebei University
- Da Lan
- Department of Materials Science and Engineering, National University of Singapore
- Chenghang Zhou
- Department of Materials Science and Engineering, National University of Singapore
- Jing Cao
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR)
- Hanxin Su
- Department of Materials Science and Engineering, National University of Singapore
- Tieyang Zhao
- Department of Materials Science and Engineering, National University of Singapore
- Ping Yang
- Singapore Synchrotron Light Source (SSLS), National University of Singapore
- Yao Zhu
- Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR)
- Xiaobing Yan
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, Hebei University
- Evgeny Y. Tsymbal
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska
- He Tian
- Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University
- Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore
- DOI
- https://doi.org/10.1038/s41467-023-37560-3
- Journal volume & issue
-
Vol. 14,
no. 1
pp. 1 – 8
Abstract
Ferroelectric hafnia-based thin films are promising for applications in memories and neuromorphic devices due to their robust ferroelectricity at reduced dimensions. Here, the authors demonstrate stabilization of the metastable orthorhombic phase in Hf0.5 Zr0.5O2 films by interface engineering with a hole doping mechanism.
