Frontiers in Physics (Feb 2014)

Programmable ferroelectric tunnel memristor

  • Andy eQuindeau,
  • Dietrich eHesse,
  • Marin eAlexe

DOI
https://doi.org/10.3389/fphy.2014.00007
Journal volume & issue
Vol. 2

Abstract

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We report an analogously programmable memristor based on genuine electronic resistive switching combining ferroelectric switching and electron tunneling. The tunnel current through an 8 unit cell thick epitaxial Pb(Zr[0.2]Ti[0.8])O[3] film sandwiched between La[0.7]Sr[0.3]MnO[3] and cobalt electrodes obeys the Kolmogorov-Avrami-Ishibashi model for bidimensional growth with a characteristic switching time in the order of 10^-7 seconds. The analytical description of switching kinetics allows us to develop a characteristic transfer function that has only one parameter viz. the characteristic switching time and fully predicts the resistive states of this type of memristor.

Keywords