Magnetic States and Electronic Properties of Manganese-Based Intermetallic Compounds Mn₂<i>Y</i>Al and Mn₃<i>Z</i> (<i>Y</i> = V, Cr, Fe, Co, Ni; <i>Z</i> = Al, Ge, Sn, Si, Pt)

Abstract

We present a brief review of experimental and theoretical papers on studies of electron transport and magnetic properties in manganese-based compounds Mn2YZ and Mn3Z (Y = V, Cr, Fe, Co, Ni, etc.; Z = Al, Ge, Sn, Si, Pt, etc.). It has been shown that in the electronic subsystem of Mn2YZ compounds, the states of a half-metallic ferromagnet and a spin gapless semiconductor can arise with the realization of various magnetic states, such as a ferromagnet, a compensated ferrimagnet, and a frustrated antiferromagnet. Binary compounds of Mn3Z have the properties of a half-metallic ferromagnet and a topological semimetal with a large anomalous Hall effect, spin Hall effect, spin Nernst effect, and thermal Hall effect. Their magnetic states are also very diverse: from a ferrimagnet and an antiferromagnet to a compensated ferrimagnet and a frustrated antiferromagnet, as well as an antiferromagnet with a kagome-type lattice. It has been demonstrated that the electronic and magnetic properties of such materials are very sensitive to external influences (temperature, magnetic field, external pressure), as well as the processing method (cast, rapidly quenched, nanostructured, etc.). Knowledge of the regularities in the behavior of the electronic and magnetic characteristics of Mn2YAl and Mn3Z compounds can be used for applications in micro- and nanoelectronics and spintronics.

Keywords

• manganese based intermetallic compounds
• antiferromagnetism
• compensated ferrimagnetism
• frustrated magnets
• half-metallic ferromagnets
• spin gapless semiconductors