Nanomaterials (Feb 2023)

Femtosecond Laser-Induced Nano-Joining of Volatile Tellurium Nanotube Memristor

  • Yongchao Yu,
  • Pooran Joshi,
  • Denzel Bridges,
  • David Fieser,
  • Anming Hu

DOI
https://doi.org/10.3390/nano13050789
Journal volume & issue
Vol. 13, no. 5
p. 789

Abstract

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Nanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femtosecond laser nano-joining method. The temperature for the entire fabrication process was maintained below 190 °C. A femtosecond laser joining technique was used to form nanowire memristor units with enhanced properties. Femtosecond (fs) laser-irradiated silver-tellurium nanotube-silver structures resulted in plasmonic-enhanced optical joining with minimal local thermal effects. This produced a junction between the Te nanotube and the silver film substrate with enhanced electrical contacts. Noticeable changes in memristor behavior were observed after fs laser irradiation. Capacitor-coupled multilevel memristor behavior was observed. Compared to previous metal oxide nanowire-based memristors, the reported Te nanotube memristor system displayed a nearly two-order stronger current response. The research displays that the multileveled resistance state is rewritable with a negative bias.

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