Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion

Abstract

Abstract 2D materials are increasingly being investigated for their nonvolatile switching properties as a step toward downscaling of core electronic elements. Here, the interplay between electrochemically active silver (Ag) cations and layered indium selenide (InSe), a 2D metal monochalcogenide, is investigated to demonstrate a nonvolatile switching device. Detailed microscopic characterization supported with density functional theory calculations reveals cationic filamentary‐based nonvolatile switching mechanism of γ‐InSe in a crossplanar architecture. This is electrically driven by diffusion of Ag ions through the layered InSe stack. The InSe‐based memory cells exhibit a switching ratio of ≈103 and a memory retention of >105 s. This work opens new opportunities to enhance resistive switching performances of 2D materials for next‐generation information storage and brain inspired computation using active metal diffusion.

Keywords

• 2D
• layered InSe
• memory
• nanofilament
• nonvolatile resistive switching
• silver cation