High efficient light emitting devices with additiona scattering layer and reflecting medium for white lig generation

Abstract

Multiexcitation of phosphors, additional scattering layer around the chip and special re- flecting medium were proposed to improve the luminous efficiency and color properties of LED devices. LED devices with an n-UV Ga(In)N chip as well as blue GaN chip and multiexcited phosphors were developed and created. These LEDs for white light generation show better quantum yield of green and red phosphors, higher total brightness, and improved color rendering index.