Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

Z. P. Zhang; Y. X. Song; Y. Y. Li; X. Y. Wu; Z. Y. S. Zhu; Y. Han; L. Y. Zhang; H. Huang; S. M. Wang

doi:10.1063/1.5005970

AIP Advances (Oct 2017)

Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

Z. P. Zhang,
Y. X. Song,
Y. Y. Li,
X. Y. Wu,
Z. Y. S. Zhu,
Y. Han,
L. Y. Zhang,
H. Huang,
S. M. Wang

Affiliations

Z. P. Zhang: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Y. X. Song: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Y. Y. Li: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
X. Y. Wu: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Z. Y. S. Zhu: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Y. Han: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
L. Y. Zhang: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
H. Huang: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
S. M. Wang: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

DOI: https://doi.org/10.1063/1.5005970
Journal volume & issue: Vol. 7, no. 10
pp. 105020 – 105020-6

Abstract

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GeSn alloy with 7.68% Sn concentration grown by molecular beam epitaxy has been rapidly annealed at different temperatures from 300°C to 800°C. Surface morphology and roughness annealed below or equal to 500°C for 1 min have no obvious changes, while the strain relaxation rate increasing. When the annealing temperature is above or equal to 600°C, significant changes occur in surface morphology and roughness, and Sn precipitation is observed at 700°C. The structural properties are analyzed by reciprocal space mapping in the symmetric (004) and asymmetric (224) planes by high resolution X-ray diffraction. The lateral correlation length and the mosaic spread are extracted for the epi-layer peaks in the asymmetric (224) diffraction. The most suitable annealing temperature to improve both the GeSn lattice quality and relaxation rate is about 500°C.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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