Analysis of Photo-Generated Carrier Escape in Multiple Quantum Wells

Jiaping Guo; Weiye Liu; Ding Ding; Xinhui Tan; Wei Zhang; Lili Han; Zhaowei Wang; Weihua Gong; Jiyun Li; Ruizhan Zhai; Zhongqing Jia; Ziguang Ma; Chunhua Du; Haiqiang Jia; Xiansheng Tang

doi:10.3390/cryst13050834

Crystals (May 2023)

Analysis of Photo-Generated Carrier Escape in Multiple Quantum Wells

Jiaping Guo,
Weiye Liu,
Ding Ding,
Xinhui Tan,
Wei Zhang,
Lili Han,
Zhaowei Wang,
Weihua Gong,
Jiyun Li,
Ruizhan Zhai,
Zhongqing Jia,
Ziguang Ma,
Chunhua Du,
Haiqiang Jia,
Xiansheng Tang

Affiliations

Jiaping Guo: Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Weiye Liu: Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Ding Ding: Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Xinhui Tan: Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Wei Zhang: Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Lili Han: Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Zhaowei Wang: Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Weihua Gong: Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Jiyun Li: Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Ruizhan Zhai: Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Zhongqing Jia: Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
Ziguang Ma: Huawei Technologies Co., Ltd., Beijing 100095, China
Chunhua Du: Institute of Physics, Chinese Academy of Sciences, Beijing 100083, China
Haiqiang Jia: Institute of Physics, Chinese Academy of Sciences, Beijing 100083, China
Xiansheng Tang: Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China

DOI: https://doi.org/10.3390/cryst13050834
Journal volume & issue: Vol. 13, no. 5
p. 834

Abstract

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Recent experiments have shown that more than 85% of photo-generated carriers can escape from multiple quantum wells (MQWs) sandwiched between p-type and n-type layers (PIN). In this work, we quantitatively analyze the relationship between the energy of carriers and the height of potential barriers to be crossed, based on the GaAs/InGaAs quantum well structure system, combined with the Heisenberg uncertainty principle. It was found that that the energy obtained by electrons from photons is just enough for them to escape, and it was found that the energy obtained by the hole is just enough for it to escape due to the extra energy calculated, based on the uncertainty principle. This extra energy is considered to come from photo-generated thermal energy. The differential reflection spectrum of the structure is then measured by pump–probe technology to verify the assumption. The experiment shows that the photo-generated carrier has a longer lifetime in its short circuit (SC) state, and thus it possesses a lower structure temperature than that in open circuit (OC). This can only explain a thermal energy reduction caused by the continuous carrier escape in SC state, indicating an extra thermal energy transferred to the escaping carriers. This study is of great significance to the design of new optoelectronic devices and can improve the theory of photo-generated carrier transports.

Published in Crystals

ISSN: 2073-4352 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Crystallography
Website: http://www.mdpi.com/journal/crystals/

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