Preparation and temperature-dependent photoelectrical properties of VO2/AZO heterojunctions

Jiangheng Pei; Yi Li; Yaqin Huang; Zhengpeng Li; Rong Tian; Jin Liu; Jianzhong Zhou; Baoying Fang; Xiaohua Wang; Han Xiao

Results in Physics (Mar 2019)

Preparation and temperature-dependent photoelectrical properties of VO2/AZO heterojunctions

Jiangheng Pei,
Yi Li,
Yaqin Huang,
Zhengpeng Li,
Rong Tian,
Jin Liu,
Jianzhong Zhou,
Baoying Fang,
Xiaohua Wang,
Han Xiao

Affiliations

Jiangheng Pei: School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
Yi Li: School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China; Shanghai Key Laboratory of Modern Optical System, Shanghai 200093, China; Corresponding author at: College of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China.
Yaqin Huang: School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
Zhengpeng Li: School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
Rong Tian: School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
Jin Liu: School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
Jianzhong Zhou: School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
Baoying Fang: School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
Xiaohua Wang: School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China; School of Electric and Information, Shanghai University of Electric Power, Shanghai 200090, China
Han Xiao: School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China; College of Medical Imaging, Shanghai University of Medicine & Health Sciences, Shanghai 201318, China

Journal volume & issue: Vol. 12
pp. 575 – 581

Abstract

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The preparation of n-N homotypic heterojunction by growing n-type VO2 film on N-type Al-doped ZnO substrate using DC magnetron sputtering and post-annealing was reported in this paper. The composition and microstructure of the VO2/AZO heterojunction were measured by XRD and SEM. The photoelectrical properties and the phase transition properties were tested by adjusting voltage at different temperature. The forward current was perfectly fitted on the thermionic emission model and the breakdown voltage was about 5 V at 20 °C. Meanwhile, the threshold voltage of current mutation was 3 V at 20 °C and decreased with increasing temperature until it completely disappeared at 60 °C. The voltage dependence transmittance of VO2/AZO heterojunction at 1310 nm was obtained. It indicated that the decrease of transmittance is the double effect of thermally induced phase transition and electrically induced phase transition. Keywords: VO2/AZO, Homotypic heterojunction, Metal-insulator transition, Forward current, Threshold voltage of current mutation, Transmittance

Published in Results in Physics

ISSN: 2211-3797 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Science: Physics
Website: http://www.journals.elsevier.com/results-in-physics/

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